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Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001) sapphire and their properties

✍ Scribed by Araki, T.; Saito, Y.; Yamaguchi, T.; Kurouchi, M.; Nanishi, Y.; Naoi, H.


Book ID
121824751
Publisher
AVS (American Vacuum Society)
Year
2004
Tongue
English
Weight
795 KB
Volume
22
Category
Article
ISSN
0734-211X

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## Abstract Crystal epilayers of (111)‐oriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm^2^) with no grain boundaries were observed. Both substrate surface preparati