𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy

✍ Scribed by Cherns, D.; Meshi, L.; Griffiths, I.; Khongphetsak, S.; Novikov, S. V.; Farley, N. R. S.; Campion, R. P.; Foxon, C. T.

Book ID
120051538
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
420 KB
Volume
93
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Growth of GaN on SiC(0001) by Molecular
Growth of GaN on SiC(0001) by Molecular Beam Epitaxy
✍ Lee, C.D. ;Sagar, Ashutosh ;Feenstra, R.M. ;Sarney, W.L. ;Salamanca-Riba, L. ;Hs πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 188 KB πŸ‘ 1 views

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Γ‚ 10 9 cm --2 for edge dislocations and 1 Γ‚ 1

Growth and characterization of GaAs on s
Growth and characterization of GaAs on sapphire (0001) by molecular beam epitaxy
✍ Alain C. Diebold; S. W. Steinhauser; R. P. Mariella Jr.; Jordi Marti; F. Reiding πŸ“‚ Article πŸ“… 1990 πŸ› John Wiley and Sons 🌐 English βš– 922 KB

## Abstract Crystal epilayers of (111)‐oriented GaAs have been grown successfully on sapphire (0001) substrates by molecular beam epitaxy. Although the epilayers were found to have a very high twin density, large areas (cm^2^) with no grain boundaries were observed. Both substrate surface preparati