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GaN growth on sapphire and 6H-SiC by metalorganic molecular beam epitaxy

✍ Scribed by M Yoshimoto; A Hatanaka; H Itoh; H Matsunami

Book ID: 108342646
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 448 KB
Volume: 188
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(98)00063-3

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