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Gallium desorption kinetics on (0001) GaN surface during the growth of GaN by molecular-beam epitaxy

✍ Scribed by He, L.; Moon, Y. T.; Xie, J.; Muñoz, M.; Johnstone, D.; Morkoç, H.


Book ID
120460085
Publisher
American Institute of Physics
Year
2006
Tongue
English
Weight
330 KB
Volume
88
Category
Article
ISSN
0003-6951

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GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Â 10 9 cm --2 for edge dislocations and 1 Â 1