From spiral growth to kinetic roughening in molecular-beam epitaxy of GaN(0001)
✍ Scribed by Vézian, S.; Natali, F.; Semond, F.; Massies, J.
- Book ID
- 118066957
- Publisher
- The American Physical Society
- Year
- 2004
- Tongue
- English
- Weight
- 449 KB
- Volume
- 69
- Category
- Article
- ISSN
- 1098-0121
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📜 SIMILAR VOLUMES
GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Â 10 9 cm --2 for edge dislocations and 1 Â 1
## Abstract The surface kinetics of InN growth on GaN(0001) by plasma assisted molecular beam epitaxy was investigated. The surface coverage of the GaN(0001) surface by InN islands and the corresponding islands' growth rate along the [0001] direction, were studied as a function of substrate tempera