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Anisotropic Step-Flow Growth and Island Growth of GaN(0001) by Molecular Beam Epitaxy

✍ Scribed by Xie, M. H.; Seutter, S. M.; Zhu, W. K.; Zheng, L. X.; Wu, Huasheng; Tong, S. Y.


Book ID
125538961
Publisher
The American Physical Society
Year
1999
Tongue
English
Weight
245 KB
Volume
82
Category
Article
ISSN
0031-9007

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GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Γ‚ 10 9 cm --2 for edge dislocations and 1 Γ‚ 1