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Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

✍ Scribed by Ng, Y. F.; Cao, Y. G.; Xie, M. H.; Wang, X. L.; Tong, S. Y.

Book ID
121791843
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
343 KB
Volume
81
Category
Article
ISSN
0003-6951

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## Abstract The surface kinetics of InN growth on GaN(0001) by plasma assisted molecular beam epitaxy was investigated. The surface coverage of the GaN(0001) surface by InN islands and the corresponding islands' growth rate along the [0001] direction, were studied as a function of substrate tempera