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Surface charge accumulation of InN films grown by molecular-beam epitaxy

✍ Scribed by Lu, Hai; Schaff, William J.; Eastman, Lester F.; Stutz, C. E.

Book ID
119965581
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
351 KB
Volume
82
Category
Article
ISSN
0003-6951

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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam