Ordered versus random nucleation of InN islands grown by molecular beam epitaxy
β Scribed by Hao Zheng; M.H. Xie; Q.K. Xue
- Book ID
- 116896836
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 1024 KB
- Volume
- 606
- Category
- Article
- ISSN
- 0039-6028
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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by Xβray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam
## Abstract The inβplane lattice parameters of InN, GaN and Al~2~O~3~ in a InN/GaN/Al~2~O~3~(0001) heterostructure have been measured as a function of temperature in the range of 25β350 Β°C, using high resolution Xβray diffraction. The results reveal that both the GaN and InN crystals follow the inβ