Analysis of biaxial strain in InN(0001) epilayers grown by molecular beam epitaxy

✍ Scribed by Dimakis, E. ;Domagala, J. ;Iliopoulos, E. ;Adikimenakis, A. ;Georgakilas, A.

• Book ID: 105364259
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 185 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200674890

✦ Synopsis

Abstract

The in‐plane lattice parameters of InN, GaN and Al~2~O~3~ in a InN/GaN/Al~2~O~3~(0001) heterostructure have been measured as a function of temperature in the range of 25–350 °C, using high resolution X‐ray diffraction. The results reveal that both the GaN and InN crystals follow the in‐plane thermal expansion of the Al~2~O~3~ substrate's lattice and there is no rearrangement of misfit dislocations at the InN/GaN and GaN/Al~2~O~3~ interfaces. It was also found that either compressive or tensile character of residual biaxial strain is possible for the InN films, depending on the two‐dimensional (2D) or three‐dimensional (3D) growth mode of InN on the GaN(0001) buffer layer. The tensile strain is inherent to the nucleation and coalescence of 3D islands. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)