Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy
β Scribed by Ko, H. J.; Chen, Y. F.; Hong, S. K.; Wenisch, H.; Yao, T.; Look, D. C.
- Book ID
- 125462728
- Publisher
- American Institute of Physics
- Year
- 2000
- Tongue
- English
- Weight
- 382 KB
- Volume
- 77
- Category
- Article
- ISSN
- 0003-6951
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π SIMILAR VOLUMES
A growth window for the Mn effusion cell temperature (T Mn ) is demonstrated for epitaxial Mn-doped ZnO (MnZnO) thin films grown on sapphire substrates using molecular-beam epitaxy. Within the growth window, the films are ferromagnetic with the largest saturated magnetization occurring at T Mn ΒΌ 700
a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe