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Photoluminescence properties of p-type InGaAsN grown by rf plasma-assisted molecular beam epitaxy

✍ Scribed by Xie, S. Y.; Yoon, S. F.; Wang, S. Z.

Book ID
121753890
Publisher
AVS (American Vacuum Society)
Year
2005
Tongue
English
Weight
274 KB
Volume
23
Category
Article
ISSN
0734-211X

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