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pn-Junction photodiode based on GaN grown on Si (111) by plasma-assisted molecular beam epitaxy

✍ Scribed by Mohd Yusoff, M.Z.; Hassan, Z.; Ahmed, Naser M.; Abu Hassan, H.; Abdullah, M.J.; Rashid, M.

Book ID: 123225615
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 852 KB
Volume: 16
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2013.07.015

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