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Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

✍ Scribed by José M. Mánuel; Francisco M. Morales; Rafael García; Rolf Aidam; Lutz Kirste; Oliver Ambacher


Book ID
116630390
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
916 KB
Volume
357
Category
Article
ISSN
0022-0248

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## Abstract We report the fabrication of GaN/AlGaN nanocolumn LEDs on n‐(111) Si substrates by RF‐MBE for the first time. Clear diode characteristics with a turn‐on voltage of 4 V and an ultraviolet emission spectrum with a peak wavelength of 354 nm were observed at room temperature. When the Al co