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Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate

✍ Scribed by N. Grandjean; B. Damilano; J. Massies; G. Neu; M. Teissere; I. Grzegory; S. Porowski; M. Gallart; P. Lefebvre; B. Gil; M. Albrecht


Book ID
126316903
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
316 KB
Volume
88
Category
Article
ISSN
0021-8979

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Optical anisotropy in the growth plane has been observed by reflectance and photoluminescence (PL) spectroscopy on nitride epilayers grown on A-plane sapphire. This anisotropy results from the strongly anisotropic thermal strain which is such that the wurtzite symmetry goes from C 6v to C 2v . Time-