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Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer

✍ Scribed by T.B. Wei; R.F. Duan; J.X. Wang; J.M. Li; Z.Q. Huo; P. Ma; Zh. Liu; Y.P. Zeng

Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 661 KB
Volume: 253
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2007.03.030

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