✦ LIBER ✦

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

✍ Scribed by M. Agrawal; N. Dharmarasu; K. Radhakrishnan; L. Ravikiran

Book ID: 116943702
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 950 KB
Volume: 520
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2012.08.010

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Origin of tensile strain in GaN grown on

Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

✍ Agrawal, M.; Dharmarasu, N.; Radhakrishnan, K.; Ravikiran, L. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 975 KB

Demonstration of AlGaN/GaN high-electron

Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si(111) by plasma-assisted molecular beam epitaxy

✍ Radhakrishnan, K.; Dharmarasu, N.; Sun, Z.; Arulkumaran, S.; Ng, G. I. 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 383 KB

High quality GaN grown on Si(111) by gas

High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia

✍ Nikishin, S. A.; Faleev, N. N.; Antipov, V. G.; Francoeur, S.; Grave de Peralta, 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 322 KB

Structural and morphological properties

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

✍ A. L. Corrion; C. Poblenz; F. Wu; J. S. Speck 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 847 KB

Threading dislocation propagation in AlG

Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy

✍ José M. Mánuel; Francisco M. Morales; Rafael García; Rolf Aidam; Lutz Kirste; Ol 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 916 KB

Structure and photoluminescence properti

Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy

✍ Chen, Hung-Ying; Lin, Hon-Way; Shen, Chang-Hong; Gwo, Shangjr 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 463 KB