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Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy

✍ Scribed by Agrawal, M.; Dharmarasu, N.; Radhakrishnan, K.; Ravikiran, L.

Book ID: 120925130
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 975 KB
Volume: 378
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.12.164

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