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Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy

✍ Scribed by Z. Sobiesierski; D.A. Woolf; D.I. Westwood; R.H. Williams

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 261 KB
Volume: 7
Category: Article
ISSN: 0749-6036
DOI: 10.1016/0749-6036(90)90237-2

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