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Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

✍ Scribed by A. L. Corrion; C. Poblenz; F. Wu; J. S. Speck

Book ID: 121815316
Publisher: American Institute of Physics
Year: 2008
Tongue: English
Weight: 847 KB
Volume: 103
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2919163

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