Influence of V/III ratio on the structural and photoluminescence properties of In 0.52 AlAs/In 0.53 GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

Fabrication and characteristics of In0.4

Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

✍ S.F. Yoon; B.P. Gay; H.Q. Zheng; K.S. Ang; H. Wang; G.I. Ng 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 313 KB

In 0.48 Ga 0.52 P/In 0.20 Ga 0.80 As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm 2 /Vs and 3