Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

✍ Scribed by S.F. Yoon; B.P. Gay; H.Q. Zheng; K.S. Ang; H. Wang; G.I. Ng

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 313 KB
• Volume: 30
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(98)00077-9

✦ Synopsis

In 0.48 Ga 0.52 P/In 0.20 Ga 0.80 As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm 2 /Vs and 3.3 ϫ 10 12 cm ¹2 , respectively. Despite the low two-dimensional electron gas (2DEG) mobility, a peak transconductance (G m ) of 267 mS/mm and peak drain current density (I ds ) of 360 mA/mm were measured for a p-HEMT device with 1.25 mm gate length. A high gate-drain breakdown voltage (BV gd ) of 33 V was measured, a value which is more than doubled compared to that of a conventional Al 0.30 Ga 0.70 As/In 0.20 Ga 0.80 As/GaAs device. The drain-source breakdown voltage (BV ds ) was 12.5 V. The results showed that the In 0.48 Ga 0.52 P/In 0.20 Ga 0.80 As/GaAs material system grown by SSMBE using the valved phosphorus cracker cell for the In 0.48 Ga 0.52 P layers is clearly viable for p-HEMT device applications.