✦ LIBER ✦
High-breakdown-voltage Ga0.51In0.49P/GaAs I-HEMT and I2HEMT with a GaInP passivation layer grown by gas source molecular beam epitaxy
✍ Scribed by S.S. Lu; C.L. Huang; T.P. Sun
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 437 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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