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Characterization of Ga0.47In0.53As and Al0.48In0.52As layers grown lattice matched on InP by molecular beam epitaxy

✍ Scribed by J. Massies; J.F. Rochette; P. Etienne; P. Delescluse; A.M. Huber; J. Chevrier

No coin nor oath required. For personal study only.

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