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Some characteristics of silicon-doped In0.52Al0.48AS layers grown lattice-matched on InP substrates by molecular beam epitaxy

✍ Scribed by S.F. Yoon; Y.B. Miao; K. Radhakrishnan

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 223 KB
Volume: 17
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1995.1051

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