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Photoluminescence characteristics of Si-doped In0.52Al0.48As grown on InP substrates by molecular beam epitaxy

โœ Scribed by S.F. Yoon; Y.B. Miao; K. Radhakrishnan

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
442 KB
Volume
151
Category
Article
ISSN
0022-0248

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๐Ÿ“œ SIMILAR VOLUMES

Growth of In0.52Al0.48As on InP substrat
Growth of In0.52Al0.48As on InP substrates by molecular beam epitaxy: some effects of V/III flux ratio variation
โœ S.F. Yoon ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 126 KB

Growth of In 0.52 Al 0.48 As epitaxial layers on InP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressure (V/III flux ratio from 30 to 300) is carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) showed a st