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Some effects of indium composition on pseudomorphic InxGa1 − xAsIn0.52Al0.48As modulation-doped heterostructures grown by molecular beam epitaxy

✍ Scribed by S.F. Yoon; Y.B. Miao; K. Radhakrishnan; H.L. Duan


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
407 KB
Volume
158
Category
Article
ISSN
0022-0248

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Growth of In0.52Al0.48As on InP substrat
✍ S.F. Yoon 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 126 KB

Growth of In 0.52 Al 0.48 As epitaxial layers on InP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressure (V/III flux ratio from 30 to 300) is carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) showed a st