✦ LIBER ✦
Electron mobility characteristics of InxGa1 − xAs/InAlAs/InP high electron mobility transistor (HEMT) structures grown by molecular beam epitaxy
✍ Scribed by Dong-Wan Roh; Hae-Gwon Lee; Jae-Jin Lee
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 339 KB
- Volume
- 167
- Category
- Article
- ISSN
- 0022-0248
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