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The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)

✍ Scribed by M.A. Sanchez-Garcia; E. Calleja; E. Monroy; F.J. Sanchez; F. Calle; E. Muñoz; R. Beresford

Book ID
108342564
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
1018 KB
Volume
183
Category
Article
ISSN
0022-0248

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