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Effect of the Buffer Layers on Lattice Polarity of GaN Epilayers Grown on the N-Face of Bulk GaN Single Crystals by Molecular-Beam Epitaxy

✍ Scribed by S. Kubo; T. Tanabe; S. Iwata; M. Konishi; S. Kurai; T. Taguchi

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 101 KB
Volume: 0
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200390058

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