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Effects of substrate temperature and V/III flux ratio on the growth of InAIAs on InP substrates by molecular beam epitaxy

✍ Scribed by S.F. Yoon; Y.B. Miao; K. Radhakrishnan; S. Swaminathan

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
416 KB
Volume
144
Category
Article
ISSN
0022-0248

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Growth of In0.52Al0.48As on InP substrat
Growth of In0.52Al0.48As on InP substrates by molecular beam epitaxy: some effects of V/III flux ratio variation
✍ S.F. Yoon πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 126 KB

Growth of In 0.52 Al 0.48 As epitaxial layers on InP(100) substrates by molecular beam epitaxy at a wide range of arsenic overpressure (V/III flux ratio from 30 to 300) is carried out. Analysis performed using low-temperature photoluminescence (PL) and double-axis X-ray diffraction (XRD) showed a st