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The effect of III–V ratio at the substrate surface on the quality of InP grown by GSMBE

✍ Scribed by A.Z. Li; J.X. Chen; M. Qi; Y.C. Ren

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 254 KB
Volume: 164
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)01030-0

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