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Effects of V/III ratio on Si-doping in InGaAs lattice-matched to InP grown by organometallic vapor phase epitaxy

✍ Scribed by Ji-Beom Yoo; Jeong-Soo Kim; Dong-Hoon Jang; Byung-Hwa Koak; Dae-Kon Oh; Hong-Man Kim; Yong-Tak Lee


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
387 KB
Volume
132
Category
Article
ISSN
0022-0248

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