✦ LIBER ✦

High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation

✍ Scribed by Wong, Man Hoi; Pei, Yi; Speck, James S.; Mishra, Umesh K.

Book ID: 121368014
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 593 KB
Volume: 94
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3130228

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Metal-face InAlN/AlN/GaN high electron m

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

✍ Guo, Jia ;Cao, Yu ;Lian, Chuanxin ;Zimmermann, Tom ;Li, Guowang ;Verma, Jai ;Gao 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 307 KB

## Abstract Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal‐face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO~2~ mask n^+^‐GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF a

Effect of AlN nucleation layer growth co

Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)

✍ Poblenz, C.; Waltereit, P.; Rajan, S.; Mishra, U. K.; Speck, J. S.; Chin, P.; Sm 📂 Article 📅 2005 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 326 KB

Demonstration of AlGaN/GaN High-Electron

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

✍ Cordier, Yvon; Moreno, Jean-Christophe; Baron, Nicolas; Frayssinet, Eric; Chenot 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 239 KB

Structural and morphological properties

Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

✍ A. L. Corrion; C. Poblenz; F. Wu; J. S. Speck 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 847 KB

High mobility two-dimensional electron g

High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

✍ Elsass, C. R.; Smorchkova, I. P.; Heying, B.; Haus, E.; Fini, P.; Maranowski, K. 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 304 KB

Ti-based nonalloyed Ohmic contacts for A

Ti-based nonalloyed Ohmic contacts for Al0.15Ga0.85N/GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy

✍ Seo, Hui-Chan; Chapman, Patrick; Cho, Hyun-Ick; Lee, Jung-Hee; Kim, Kyekyoon (Ke 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 709 KB