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Field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors

✍ Scribed by Holzworth, M. R.; Rudawski, N. G.; Whiting, P. G.; Pearton, S. J.; Jones, K. S.; Lu, L.; Kang, T. S.; Ren, F.; Patrick, E.; Law, M. E.

No coin nor oath required. For personal study only.

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