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Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors

✍ Scribed by Sierakowski, Andrej J.; Eastman, Lester F.

Book ID: 121789227
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 224 KB
Volume: 86
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.371240

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