Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

✍ Scribed by Sasikumar, A.; Arehart, A. R.; Martin-Horcajo, S.; Romero, M. F.; Pei, Y.; Brown, D.; Recht, F.; di Forte-Poisson, M. A.; Calle, F.; Tadjer, M. J.; Keller, S.; DenBaars, S. P.; Mishra, U. K.; Ringel, S. A.

• Book ID: 120814223
• Publisher: American Institute of Physics
• Year: 2013
• Tongue: English
• Weight: 795 KB
• Volume: 103
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4813862