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Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy

✍ Scribed by M. Marso; M. Wolter; P. Javorka; P. Kordoš; H. Lüth

Book ID: 121795705
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 269 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1540239

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