Effect of surface passivation by SiN/SiO2of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

✍ Scribed by Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

• Book ID: 120794227
• Publisher: Springer
• Year: 2013
• Tongue: English
• Weight: 212 KB
• Volume: 47
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/S1063782613070087