✦ LIBER ✦
Deep Traps in AlGaN/GaN Heterostructure Field-Effect Transistors Studied by Current-Mode Deep-Level Transient Spectroscopy: Influence of Device Location
✍ Scribed by Z.-Q. Fang; B. Claflin; D.C. Look
- Publisher
- Springer US
- Year
- 2011
- Tongue
- English
- Weight
- 588 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0361-5235
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