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Theoretical model of transport characteristics of AlGaN/GaN high electron mobility transistors

✍ Scribed by A. Asgari; M. Kalafi; L. Faraone

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 270 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200460618

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