Characterization of InAlN/GaN high-electron-mobility transistors grown on Si substrate using graded layer and strain-layer superlattice

✍ Scribed by Watanabe, Arata; Freedsman, Joseph J.; Oda, Ryuhei; Ito, Tatsuya; Egawa, Takashi

• Book ID: 126476800
• Publisher: Institute of Pure and Applied Physics
• Year: 2014
• Tongue: English
• Weight: 643 KB
• Volume: 7
• Category: Article
• ISSN: 1882-0778
• DOI: 10.7567/APEX.7.041002