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DC characteristics of lattice-matched InAlN/AlN/GaN high electron mobility transistors

✍ Scribed by Sheng Xie 谢生, Zhihong Feng 冯志红, Bo Liu 刘波…

Book ID: 120956504
Publisher: Tianjin University
Year: 2013
Tongue: Chinese
Weight: 521 KB
Volume: 19
Category: Article
ISSN: 1006-4982
DOI: 10.1007/s12209-013-1920-0

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## Abstract In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interl