✦ LIBER ✦

The structure of InAlN/GaN heterostructures for high electron mobility transistors

✍ Scribed by Vilalta-Clemente, A. ;Poisson, M. A. ;Behmenburg, H. ;Giesen, C. ;Heuken, M. ;Ruterana, P.

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 462 KB
Volume: 207
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200983119

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✦ Synopsis

Abstract

In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interlayer thickness is increased, the growth mode becomes three‐dimensional. However, the formed islands are hundred of nanometers apart, and were not observed in the transmission electron microscope.

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