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Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors

✍ Scribed by Molnár, M.; Donoval, D.; Kuzmík, J.; Marek, J.; Chvála, A.; Príbytný, P.; Mikolášek, M.; Rendek, K.; Palankovski, V.

Book ID: 125451810
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 574 KB
Volume: 312
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2014.04.078

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