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Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors

✍ Scribed by Saadaoui, Salah; Salem, Mohamed Mongi Ben; Fathallah, Olfa; Gassoumi, Malek; Gaquière, Christophe; Maaref, Hassen

Book ID: 120506264
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 720 KB
Volume: 412
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2012.11.031

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