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Hall and photoluminescence studies of effects of the thickness of an additional In0.3Ga0.7As layer in the center of In0.15Ga0.85As/Al0.25Ga0.75As/GaAs high electron mobility transistors

✍ Scribed by Feng Zhao; Chongyang Liu; Shu Yuan; Jian Jiang; Michael Chan

No coin nor oath required. For personal study only.

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