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Enhancement of electron mobility by preventing pit formation at the In0.52Al0.48As/In0.8Ga0.2As heterointerface using an inserted In0.53Ga0.47As layer

✍ Scribed by Tatsuo Nakayama; Hironobu Miyamoto; Emi Oishi; Norihiko Samoto

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
666 KB
Volume
150
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES

Nonparabolic tendency of electron effect
Nonparabolic tendency of electron effective mass estimated by confined states in In0.53Ga0.47As/In0.52Al0.48As multi-quantum-well structures
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We observed that a series of peaks, which were clearly extracted from a photocurrent difference spectrum, corresponded to interband optical transitions of an In 0.53 Ga 0.47 As/ In 0.52 Al 0.48 As multi-quantum wells structure. The nonparabolic tendency of the electron effective mass was suggested f

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Photocurrent spectra in an In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multi-quantum wells structure containing 9.4 nm wide wells were measured at room temperature in electric fields. The exciton peaks of ground-state transitions shifted fairly in 167 kV cm -1 as the quantum confined Stark effect. Stark s