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Study for realization of spin-polarized field effect transistor in In0.75Ga0.25As/In0.75Al0.25As heterostructure

✍ Scribed by Yuuki Sato; Shin-ichiro Gozu; Tomohiro Kita; Syoji Yamada

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
164 KB
Volume
12
Category
Article
ISSN
1386-9477

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We have fabricated and characterized Hall probes on an In 0.75 Al 0.25 As/In 0.75 Ga 0.25 As two-dimensional electron gas with lateral sizes down to 100 nm. We studied the dependence of the low temperature (4 K) magnetic field sensitivity on the probe size, showing that the best flux sensitivity is