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High-field transport in high carrier density GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructures

โœ Scribed by M. van der Burgt; A. Van Esch; F.M. Peeters; M. Van Hove; G. Borghs; F. Herlach

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
339 KB
Volume
184
Category
Article
ISSN
0921-4526

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โœฆ Synopsis

We report magnetotransport experiments in high carrier density GaAs/GaoslnozAs/Gao.75Alo25As heterostructures in magnetic fields up to 50 T. At the lowest electron densities the quantized Hall effect is observed, with one subband occupied. As the density is increased, features indicating the population of the second subband emerge. Further increase of the electron density results in drastic changes in the transport coefficients Pxx and Pry, especially at fields above 30 T. The data cannot be explained by standard models for two-band conduction or magnetic freeze-out.

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